ELECTROMAGNETIC-FORCE-DRIVING TYPE MEMS SWITCH USING HIGH PERFORMANCE NdFeB/Ta THIN FILM PERMANENT MAGNET
نویسندگان
چکیده
INTRODUCTION Because they have higher isolation and lower insertion loss compared to semiconductor switches, the last decade has seen the development of several types of MEMS (Micro Electro Mechanical Systems) switch. Many of these are electrostatically actuated and so need high drive voltages, limiting the initial gap between the contact points to a few micrometers [1-3]. Such small gaps between the contact points limit the isolation properties of the switch.
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